Product category:
Electrical and Electronic Components
News Release from: Dynex Semiconductor
Edited by the Engineeringtalk Editorial
Team on 21 June 2001
Power semiconductors behind Renault
electric van
Dynex Power has announced a major production order with Groupe Sagem to provide power semiconductor modules for Renault's new Kangoo all-electric and hybrid thermal-electric minivan
Dynex Power has announced a major production order with Groupe Sagem, a leading French electronic equipment manufacturer, to provide power semiconductor modules for Renault's new Kangoo all-electric and hybrid thermal-electric minivan due for release at the end of 2001 This order is the result of three years collaboration between Dynex and Sagem on the use of power semiconductors in the technically challenging hybrid automotive market
This article was originally published on Engineeringtalk on 14 Mar 2001 at 8.00am (UK)
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Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives.
The Renault Kangoo will have a range of 100 km, a top speed of 120 km/h and will be able to recharge from a standard domestic power outlet.
Dynex is supplying 600 V Insulated Gate Bipolar Transistor (IGBT) modules, for the electric motor drive.
Dynex IGBT modules provide flexible and accurate control of electrical energy with improved thermal performance.
Sagem has committed to an initial order worth approximately CDN$500,000, with strong potential for order book growth as sales of this new class of vehicles expands.
"This design win is a milestone sale of our power semiconductor product into the automotive market and exemplifies the tremendous growth we are experiencing in applications for power semiconductors", said Michael LeGoff, President and CEO of Dynex: "We are pleased to be working with Sagem and Renault to power this new generation of cleaner, greener, more efficient automobiles.".
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