Product category:
Electrical and Electronic Components
News Release from: Dynex Semiconductor | Subject: IGBTs
Edited by the Engineeringtalk Editorial
Team on 21 June 2001
IGBT module improvements includes new
range
Dynex Power has enhanced its product offerings in Insulated Gate Bipolar Transistors (IGBTs), for the new generation of improved electrical power control and switching equipment
Dynex Power, a leader in power semiconductor technology, will be unveiling, through its wholly owned subsidiary Dynex Semiconductor, three new additions to its product lines at the power industry's largest trade show, Power Control and Intelligent Motion (PCIM) in Nuremberg, Germany, on June 19-21, 2001 The additions enhance the company's product offerings in Insulated Gate Bipolar Transistors (IGBTs), for the new generation of improved electrical power control and switching equipment
This article was originally published on Engineeringtalk on 14 Mar 2001 at 8.00am (UK)
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Dynex supports rail and industrial drives
Dynex Semiconductor, a leader in power semiconductor technology, has released high power 3,300V IGBT semiconductors packaged in industry standard isolated module outlines.
In response to customer demand, Dynex is introducing a revised version of its L Outline Package which will be capable of 3300 V for fast recovery diode (FRD) modules, will house a 3300 V IGBT single switch arrangement, and has been modified to achieve a 6000 V isolation rating.
The revised L Outline is the smallest 3300 V package available, has improved thermal resistance and is designed for high voltage applications, in particular railway traction auxiliary power supplies and industrial motor drives.
The new range of 1700 V IGBT modules, complemented by the recently announced new family of FRD modules, is the first completely new IGBT product line released since the creation of Dynex Semiconductor last year.
Dynex's new IGBTs can withstand a 10 microsecond short circuit, making them ideal for use in motor drives and rugged applications.
The DCR1021SF65 Phase Control Thyristor, designed to have a low forward voltage drop and optimised thermal resistance, is capable of switching an average current rating 840 A at 6500 V.
This makes this device ideal for input into rectifiers for high voltage IGBT inverters and high voltage power supplies.
"We're pleased to expand our product line in the fastest growing segment of the power industry-IGBTs", said Michael LeGoff, President and CEO of Dynex: "Our participation in high profile industry events like PCIM has, and will continue to help us recognize and meet the needs of the power industry.".
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