Product category:
Electrical and Electronic Components
News Release from: Dynex Semiconductor | Subject: High Power 3,300 Volt Semiconductors
Edited by the Engineeringtalk Editorial
Team on 11 September 2001
Dynex supports rail and industrial
drives
Dynex Semiconductor, a leader in power semiconductor technology, has released high power 3,300V IGBT semiconductors packaged in industry standard isolated module outlines.
High Power 3,300 Volt Semiconductors Dynex supports growth in rail and industrial drives Dynex Semiconductor, a leader in power semiconductor technology, has released high power 3,300V IGBT semiconductors packaged in industry standard isolated module outlines Dynex's Insulated Gate Bipolar Transistors (IGBTs) are the semiconductors of choice for new applications in electric urban and high speed rail systems
This article was originally published on Engineeringtalk on 14 Mar 2001 at 8.00am (UK)
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The products were originally developed to meet the extremely demanding electrical and environmental standards of the railway traction industries and so are ideal for industrial motor drives, power supplies and power conversion products.
The new high power versions have already been ordered in prototype quantities and are now being released into production.
"This product release is in line with the product development roadmap we put together at the beginning of the year.
Further reading
IGBT module improvements includes new range
Dynex Power has enhanced its product offerings in Insulated Gate Bipolar Transistors (IGBTs), for the new generation of improved electrical power control and switching equipment
Power distribution system gets new surge arrester
A new surge arrester offers protection against the massive, transient overvoltages believed to be responsible for over 30 per cent of all damage to electronic equipment.
We are continuing to make progress with new product launches where we are seeing the best long term market demand for our technologies," said Dr.Paul Taylor, Chief Technology Officer.
Following on from the release earlier this year of the compact P and L outline packages, the N and E packages use similar metal matrix base plates and aluminium nitride substrates to achieve improved thermal cycling performance and low thermal resistance.
The first products to be released are a 3,300V, 800A single switch IGBT module with a 130 x 140 mm footprint, and a 3,300V, 1200A single switch IGBT module with a 140 x 190mm footprint.
The packages achieve 6,000 volt isolation and the IGBT switches have a full 10 microsecond short-circuit withstand rating.
Dynex Semiconductor is a wholly owned subsidiary of Dynex Power and is a global supplier of products and services in the field of power semiconductors, microwave sensors and other integrated circuit products.
The Company's power products are used to improve the reliability and quality of electrical power supply in power generation and distribution, marine and rail engines, induction heating, motor controls, telecommunications and automotive.
The sensors products are used as security alarm sensors in premier motor cars.
Dynex is headquartered in Ottawa, with sales offices in the United States and Paris, France.
Manufacturing, silicon fabrication, sales and marketing, design and research and development are centred in its 160,000 square foot facility in Lincoln, UK.
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