Patent for in-situ temperature measurement

A LumaSense Technologies product story
Edited by the Engineeringtalk editorial team Aug 14, 2003

Luxtron Corp has been awarded a patent for in-situ temperature measurement of wafers and other substrates during semiconductor processing.

Luxtron Corp has been awarded a patent for in-situ temperature measurement of wafers and other substrates during semiconductor processing.

US Patent 6,572,265 entitled "In situ optical surface temperature measuring techniques and devices" covers several novel optical sensors and methods, including, but not limited to, those based on Luxtron's Fluoroptic thermometry technology.

"Luxtron has developed multiple sensor designs capable of in-situ wafer temperature measurement in response to industry demand for tighter thermal control of 300mm etch and deposition processes.

All designs are minimally invasive, inherently immune to RF and EMI, and particularly well suited for use in plasma assisted processes or for use with electrostatic chucks", states Anh Hoang, Luxtron Vice President of R and D and Engineering.

"At the same time, we've reduced the cost of these technologies 40-50% since 2000.

As a result, OEM customers are recognising that these technologies can be a cost effective enabler of 300mm processes.

Several designs are already integrated into production 200 and 300mm tools at two of the top three plasma etch OEMs and are pending release by several PVD OEMs this year".

Additional patents, both US and foreign, are still pending.

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