Metrology system aids laser manufacturers
More than 75 Epitune II in-situ metrology systems, based on Luxtron's patented Ripple technology, have been shipped on Aixtron MOCVD reactors.
More than 75 Epitune II in-situ metrology systems, based on Luxtron's patented Ripple technology, have been shipped on Aixtron MOCVD reactors.
This includes multiple orders to major customers in Taiwan and the USA.
The Epitune II in-situ metrology system is a standard feature on all Aixtron Planetary Reactors for production of GaN-based optical devices.
Epitune II provides precise process control of challenging processes such as GaN based blue lasers, LEDs and laser diodes.
In addition to measuring the true surface temperature, this real-time monitoring tool also provides simultaneous reflectivity measurements for valuable in- situ film growth characteristics.
Luxtron's Ripple technology offers unparalleled precision in temperature measurements over a range of 400 to 1600C, making the Epitune II ideal for GaN, GaAs-, InP and other III-V processes.
Aixtronïs large-scale Planetary Reactor systems, offering superior cost of ownership, have lead to the worldwide acceptance of MOCVD as the leading deposition technology for production of optoelectronic devices.
Aixtron's MOCVD reactors with the Epitune II system represents the industry standard for production of LEDs and lasers based on III-V compounds.
Aixtron's Planetary Reactors are used as production tools at most of the major LED manufacturers, including LumiLeds, Epistar, Forepi, Arima, Epitech, UEC, Tekcore, Samsung and many others.
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