CVD materials aid processing machinery

A Morgan Advanced Ceramics product story
Edited by the Engineeringtalk editorial team Feb 21, 2005

Morgan Advanced Ceramics offers silicon carbide (SiC) by chemical vapour deposition (CVD) for semiconductor wafer processing equipment through its CVD Materials Division.

Morgan Advanced Ceramics offers silicon carbide (SiC) by chemical vapour deposition (CVD) for semiconductor wafer processing equipment through its CVD Materials Division.

Using an advanced chemical vapour deposition manufacturing process, CVD Materials produces ultrapure SiC and low electrical resisitivity SiC, both outperforming conventional materials in hostile chemical and plasma environments.

The unparalleled chemical and erosion resistance and outstanding thermal conductivity of CVD SiC make it well matched for a variety of semiconductor manufacturing components, including edge rings, susceptors, processing chambers, liners and gas distribution plates.

CVD SiC offers high purity, stiffness, dimensional stability and thermal shock resistance, resulting in components with increased durability and longevity.

With theoretical density, intrinsic purity and controllable electrical conductivity, CVD SiC is ideally suited for advanced thermal applications.

High stiffness and material integrity enable very thin cross-section SiC geometry to be produced, lowering thermal mass and increasing throughput and cycle times for applications such as rapid thermal processing.

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